
Low-Dimensional Semiconductor Structures: Fundamentals and Device Applications
by Edited by Keith Barnham , Dimitri VvedenskyBuy New
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Summary
Author Biography
Table of Contents
List of contributors | p. xii |
Preface | p. xiii |
Epitaxial Growth of Semiconductors | p. 1 |
Introduction | p. 1 |
Epitaxial Growth Techniques | p. 3 |
Molecular-beam Epitaxy | p. 3 |
Vapour-phase Epitaxy | p. 6 |
Molecular-beam Epitaxy with Heteroatomic Precursors | p. 7 |
Epitaxial Growth Modes | p. 8 |
In Situ Observation of Growth Kinetics and Surface Morphology | p. 10 |
Reflection High-energy Electron Diffraction | p. 11 |
Scanning Tunnelling Microscopy | p. 12 |
Atomic Force Microscopy | p. 13 |
Atomistic Processes during Homoepitaxy | p. 16 |
Growth Kinetics on Vicinal GaAs(001) | p. 16 |
Anisotropic Growth and Surface Reconstructions | p. 19 |
Vicinal GaAs(001) | p. 19 |
Vicinal Si(001) | p. 21 |
Models of Homoepitaxial Kinetics | p. 23 |
The Theory of Burton, Cabrera and Frank | p. 23 |
Homogeneous Rate Equations | p. 24 |
Multilayer Growth on Singular Surfaces | p. 27 |
Mechanisms of Heteroepitaxial Growth | p. 29 |
Kinetics and Equilibrium with Misfit Strain | p. 29 |
The Frenkel-Kontorova Model | p. 30 |
Direct Growth of Quantum Heterostructures | p. 32 |
Quantum Wells and Quantum-well Superlattices | p. 33 |
Quantum Wire Superlattices | p. 34 |
Self-organized Quantum Dots | p. 37 |
Stranski-Krastanov Growth of InAs on GaAs(001) | p. 38 |
Controlled Positioning of Quantum Dots | p. 40 |
Ge 'Hut' Clusters on Si(001) | p. 40 |
Growth on Patterned Substrates | p. 42 |
Selective Area Growth | p. 43 |
Quantum Wires on 'V-Grooved' Surfaces | p. 43 |
Stranski--Krastanov Growth on Patterned Substrates | p. 44 |
Future Directions | p. 46 |
Exercises | p. 47 |
References | p. 51 |
Electrons in Quantum Semiconductor Structures: An Introduction | p. 56 |
Introduction | p. 56 |
Ideal Low-dimensional Systems | p. 57 |
Free Electrons in Three Dimensions: A Review | p. 57 |
Ideal Two-dimensional Electron Gas | p. 58 |
Ideal Zero- and One-dimensional Electron Gases | p. 60 |
Quantum Wells, Wires, and Dots | p. 61 |
Real Electron Gases: Single Particle Models | p. 61 |
Ideal Square Well | p. 62 |
Some Generalizations | p. 65 |
Holes in Quantum Wells | p. 65 |
Non-parabolicity | p. 65 |
Finite Quantum Wells and Real Systems | p. 66 |
Interface Effects | p. 70 |
Effective Mass for Parallel Transport | p. 70 |
Effective-mass Correction to Conduction-band Discontinuities | p. 71 |
Quantum Wires | p. 73 |
Quantum Point Contacts | p. 74 |
Quantum Dots | p. 75 |
Exercises | p. 76 |
References | p. 77 |
Electrons in Quantum Semiconductors Structures: More Advanced Systems and Methods | p. 79 |
Introduction | p. 79 |
Many-body Effects | p. 79 |
The Hartree Approximation | p. 79 |
Beyond the Hartree Approximation | p. 81 |
The 2DEG at a Heterojunction Interface | p. 82 |
The Ideal Heterojunction | p. 85 |
Some Calculational Methods | p. 86 |
The WKB Approximation | p. 87 |
The 2DEG in Doping Wells | p. 90 |
The Delta Well (Spike Doping) | p. 93 |
The Thomas--Fermi Approximation for Two-dimensional Systems | p. 95 |
The Thomas--Fermi Approximation for Heterojunctions and Delta Wells | p. 96 |
Quantum Wires and Quantum Dots | p. 97 |
Quantum Point Contacts and Quantized Conductance Steps | p. 97 |
A Closer Look at Quantum Dots | p. 101 |
The Coulomb Blockade and Single-electron Transistors | p. 104 |
Superlattices | p. 106 |
Superlattices and Multi-quantum-wells | p. 107 |
Miniband Properties: The WKB Approximation | p. 109 |
Doping Superlattices | p. 112 |
Delta-Doped n-i-p-is | p. 114 |
Compositional and Doping Superlattices | p. 115 |
Other Types of Superlattices | p. 116 |
Exercises | p. 118 |
References | p. 122 |
Phonons in Low-dimensional Semiconductor Structures | p. 123 |
Introduction | p. 123 |
Phonons in Heterostructures | p. 124 |
Superlattices | p. 125 |
Mesoscopic Phonon Phenomena | p. 131 |
Electron--Phonon Interactions in Heterostructures | p. 135 |
Conclusion | p. 144 |
Exercises | p. 145 |
References | p. 147 |
Localization and Quantum Transport | p. 149 |
Introduction | p. 149 |
Localization | p. 151 |
Percolation | p. 151 |
The Anderson Transition and the Mobility Edge | p. 151 |
Variable Range Hopping | p. 154 |
Minimum Metallic Conductivity | p. 154 |
Scaling Theory and Quantum Interference | p. 155 |
The Gang of Four | p. 155 |
Experiments on Weak Localization | p. 157 |
Quantum Interference | p. 158 |
Negative Magnetoresistance | p. 159 |
Single Rings and Non-local Transport | p. 160 |
Spin--orbit Coupling, Magnetic Impurities, etc. | p. 163 |
Universal Conductance Fluctuations | p. 163 |
Ballistic Transport | p. 163 |
Interaction Effects | p. 164 |
The In T Correction | p. 164 |
Wigner Crystallization | p. 164 |
The Quantum Hall Effect | p. 165 |
General | p. 165 |
The Quantum Hall Effect Measurements | p. 168 |
The Semiclassical Theory | p. 170 |
The Fractional Quantum Hall Effect | p. 172 |
Exercises | p. 175 |
References | p. 178 |
Electronic States and Optical Properties of Quantum Wells | p. 180 |
Introduction | p. 180 |
The Envelope Function Scheme | p. 183 |
The Parabolic Band Model | p. 187 |
Effects of Band Mixing | p. 192 |
Light Particle Band Non-parabolicity | p. 192 |
Valence Band Non-parabolicity | p. 193 |
Multiple Well Effects | p. 194 |
Effects of the Coulomb Interaction | p. 197 |
Excitons in Bulk Semiconductors | p. 197 |
Excitons in Quantum Wells | p. 198 |
Effects of Applied Bias | p. 201 |
Optical Absorption in a Quantum Well | p. 205 |
Optical Characterization | p. 209 |
Measurement of Absorption | p. 209 |
Features of Optical Spectra | p. 211 |
Band Non-parabolicity | p. 211 |
Valence Band Mixing | p. 212 |
Interwell Coupling | p. 214 |
Electric Field | p. 214 |
Quantum-well Solar Cells | p. 215 |
Photoconversion | p. 215 |
Basic Principles | p. 217 |
Photocurrent | p. 217 |
Recombination Current | p. 221 |
Carrier Escape | p. 221 |
Concluding Remarks | p. 222 |
Exercises | p. 222 |
References | p. 225 |
Non-Linear Optics in Low-dimensional Semiconductors | p. 227 |
Introduction | p. 227 |
Non-dissipative NLO Processes | p. 229 |
Dissipative NLO Effects | p. 231 |
Potential Applications of NLO | p. 232 |
Serial Channel Applications | p. 232 |
Multi-channel Applications: Optical Computing | p. 233 |
Excitonic Optical Saturation in MQWs | p. 234 |
Excitonic Absorption at Low Intensities | p. 234 |
Saturation of Excitonic Peaks at High Intensities | p. 237 |
The Quantum Confined Stark Effect | p. 239 |
Doping Superlattices ('n-i-p-i' Crystals) | p. 242 |
Hetero--n-i-p-i Structures | p. 246 |
Band Filling Effects in Hetero--n-i-p-is | p. 247 |
The QCSE in Hetero--n-i-p-is | p. 249 |
Concluding Remarks | p. 254 |
Exercises | p. 255 |
References | p. 257 |
Semiconductor Lasers | p. 260 |
Introduction | p. 260 |
Basic Laser Theory | p. 262 |
Laser Threshold | p. 265 |
Threshold Current Density | p. 267 |
Power Output | p. 270 |
Fundamental Gain Calculations | p. 272 |
Electronic Band Structure and Densities of States | p. 272 |
Carrier Density and Inversion | p. 274 |
Gain Expression | p. 276 |
Optical Gain in 2D and 3D Active Regions | p. 277 |
Strained Layers | p. 280 |
Optical Interband Matrix Element | p. 284 |
Some other Laser Geometries | p. 286 |
Exercises | p. 292 |
References | p. 294 |
Mesoscopic Devices | p. 296 |
Introduction | p. 296 |
Quantum Interference Transistors | p. 297 |
Quantum Interference and Negative Magnetoresistance | p. 297 |
The Aharanov--Bohm Effect | p. 303 |
Universal Conductance Fluctuations | p. 306 |
Quantum Interference Transistors | p. 309 |
The Gated Ring Interferometer | p. 310 |
The Stub Tuner | p. 311 |
Problems with Quantum Interference Transistors | p. 311 |
Ballistic Electron Devices | p. 314 |
Electron Transmission and the Landauer--Buttiker Formula | p. 315 |
Quantized Conductance in Ballistic Point Contacts | p. 316 |
Multi-terminal Devices | p. 318 |
The Negative Bend Resistance | p. 318 |
Quenching of the Hall Effect | p. 319 |
Possible Applications of Ballistic Electron Devices | p. 320 |
Boundary Scattering in Ballistic Structures | p. 323 |
Quantum Dot Resonant Tunnelling Devices | p. 325 |
Resonant Tunnelling through Quantum Wells | p. 326 |
Resonant Tunnelling through Quantum Dots | p. 328 |
Gated Resonant Tunnelling through Quantum Dots | p. 329 |
Coulomb Blockade and Single-electron Transistors | p. 331 |
Coulomb Blockade in the Current-biassed Single Junction | p. 332 |
Coulomb Blockade in Double Junctions | p. 334 |
Necessary Conditions for Efficient Coulomb Blockade | p. 335 |
Single-electron Transistors | p. 335 |
Co-tunnelling and Multiple Tunnel Junctions | p. 339 |
Possible Applications of Single-electron Transistors | p. 340 |
The Future of Mesoscopic Devices | p. 342 |
Exercises | p. 343 |
References | p. 345 |
High-speed Heterostructure Devices | p. 348 |
Introduction | p. 348 |
Field-effect Transistors | p. 349 |
The Si MOSFET | p. 349 |
GaAs/AlGaAs High-electron-mobility Transistor | p. 355 |
InGaAs HEMTs | p. 358 |
Delta-doped FETs | p. 361 |
Vertical Transport Devices | p. 363 |
Unipolar Diodes | p. 364 |
Hot-electron Devices | p. 365 |
Resonant Tunnelling Structures | p. 367 |
Superlattice Devices | p. 370 |
Heterojunction Bipolar Transistors | p. 372 |
Conclusions | p. 375 |
Exercises | p. 375 |
References | p. 377 |
Solutions to Selected Exercises | p. 379 |
Index | p. 387 |
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